The Effect of Adding La2o3 And Fe2o3 to the Thick Film Sno2 Sensor on the Sensor's Properties

Abstract

Semiconductor based oxide material was used over many years as sensing materials for fabrication of gas sensors. The concentration of charges, which are brought on the surface of semiconductor gas sensors, is sensitive to the composition of surrounding atmosphere. Therefore, these materials were employed for detection of different gases [1], [2]. SnO₂ is one of the most important metal oxide materials, which is used as the base material for fabrication of gas sensors [3], [4]. Besides, the effects of metal oxide semiconducting requisites such as La₂O₃ and Fe₂O₃ on the gas sensor system were searched. The sensors included in this study were obtained by a simple and economical screen-printing method which does not require any technological device and infrastructure. The technology that uses thick film can produce multiple layers on one or both sides of the bottom layer. It has many advantages such as low expenditure, high precision, chemical, and mechanical determination. For this reason, low-cost SnO₂, La₂O₃ doped SnO₂, and Fe₂O₃ doped SnO₂ metal oxide gas sensors with good sensing properties in the gas environment were obtained using this technology, and structural, morphological, and sensor properties were investigated.